3-level flying capacitor booster
in this topology, the additional voltage levels are synthesized by a capacitor, the so-called flying-capacitor.
the voltage of the flying capacitor is half of the output voltage. the capacitor can offset the output voltage with vout/2 in a positive and negative direction.
as the operation is three-leveled, the voltage stress on the mosfet or diode is decreased. this results in lower emi, lower current, and lower voltage ripple.
- 3-level topology reduce stress on semiconductor devices
- various choises of boost switch depend on system requirements
- lower loss sic mosfet, igbt
- smaller package choises from 3-leads, 4-leads or 7-leads,
- sic shott key diode provide lower loss
|product category||product family||product number||feature|
|boost switch||650v igbt||rgwxxtx65 series||trench-gate and thin-wafer technologies are utilized to achieve low vce(sat) reducing switching loss.|
|750v sic mosfet||sct4xxxdx series||the latest sic mosfet device. enhanced low on-resistance enable best in class performance. it supports 750 v withstand voltage, ensuring a higher operating margin than conventional products, and can be used safely.|
|650v sic mosfet||sct3xxxax series||trench-gate sic mosfet with low on-resistance (50% reduction) compared to conventional products.|
|boost diode||650v sic sbd||scs3xxax series||high ifsm in spite of low vf, low leakage current provides safety design.|
|gate driver||galvanic isolated gate driver||bm61x4xrfv||1ch configuration, 3,750vrms isolated type gate driver, can be used for switching devices with current source pins.|